Band gaps modelling of dilute bismide (GaBi x As 1−x ) and dilute nitride (GaN x As 1−x )

TítuloBand gaps modelling of dilute bismide (GaBi x As 1−x ) and dilute nitride (GaN x As 1−x )
AutoresUmair Ahmad Nasir, Natalia Seoane, Antonio Garcia Loureiro
TipoComunicación para congreso
Fonte 11th Spanish Conference on Electron Devices, 2017.