FoMPy: A figure of merit extraction tool for semiconductor device simulations

TítuloFoMPy: A figure of merit extraction tool for semiconductor device simulations
AutoresG. Espiñeira, N. Seoane, D. Nagy, G. Indalecio and A.J. García-Loureiro
TipoComunicación para congreso
Fonte Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Granada, España, 2018.
DOI10.1109/ULIS.2018.8354752
AbstractThe aim of this work is to present an efficient tool that extracts the main figures of merit (FoM) of a semiconductor’s I-V curve and provides useful statistical parameters for variability studies. Two state-of-the-art devices have been used as benchmarks in order to show its capabilities. It includes several methods implemented to obtain the threshold voltage and allows the user to compare the results without compromising them by the methodology used. This study demonstrates the importance of choosing an appropriate method of extraction as the results may vary significantly thus making FoMPy an excellent tool to evaluate a device's performance.
Palabras chavePython tool, threshold voltage, figure of merits, FinFETs, nanowires, FoMPy