Random dopant related variability in the 30 nm gate length In0.75Ga0.25As implant free MOSFET

TítuloRandom dopant related variability in the 30 nm gate length In0.75Ga0.25As implant free MOSFET
AutoresNatalia Seoane, A.J. Garcia-Loureiro, K. Kalna and A. Asenov
TipoArtículo de revista
Fonte Journal of Computational Electronics, SPRINGERLINK, Vol. 7, pp. 159-163 , 2008.
ISSN1569-8025
DOI10.1007/s10825-008-0233-3
AbstractABSTRACT Implant free MOSFETs take advantage of the high mobility in III–V materials to allow operation at very high speed and low power. However, as with conventional silicon devices, they will be susceptible to intrinsic parameter fluctuations due to random discrete doping. In this paper, we investigate the impact of random discrete dopants induced fluctuations in the δ-doping layer on the threshold voltage of the 30 nm gate length implant free III–V MOSFET.
Palabras chaveIntrinsic parameter fluctuations , Random discrete dopants , Implant free MOSFETs , Drift-diffusion , 3D simulations

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