A Review of CMOS Photodiode Modeling and the Role of the Lateral Photoresponse

TítuloA Review of CMOS Photodiode Modeling and the Role of the Lateral Photoresponse
AutoresBeatriz Blanco-Filgueira, Paula López Martínez, Juan Bautista Roldán Aranda
TipoArtículo de revista (reseña)
Fonte IEEE Transactions on Electron Devices, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, Vol. 63, No. 1, pp. 16-25 , 2016.
RankRanked Q1 in Electronic, Optical and Magnetic Materials by SJR
ISSN0018-9383
DOI10.1109/TED.2015.2446204
AbstractThe CMOS photodiode is the primary photosensing device used in solid-state image sensors. A review of significant CMOS photodiode models that can be found in the literature in recent years is presented here. We have focused on photocurrent models in one, two, and three dimensions, paying special attention to lateral current components. Lateral collection, particularly for small devices fabricated in deep submicrometer technologies, has been shown to be of utmost importance. Finally, several models to account for crosstalk effects are also described.
Palabras chaveCMOS photodiode, crosstalk, lateral current, modeling, simulation