Vertical-Tunnel-Junction (VTJ) Solar Cell for Ultra-High Light Concentrations (>2000 Suns)

TítuloVertical-Tunnel-Junction (VTJ) Solar Cell for Ultra-High Light Concentrations (>2000 Suns)
AutoresEduardo F. Fernández, Natalia Seoane, Florencia Almonacid and Antonio J. García-Loureiro
TipoArtículo de revista
Fonte IEEE Electron Device Letters, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC , Vol. 40, No. 1, pp. 44-47 , 2019.
RankRanked Q1 in Electronic, Optical and Magnetic Materials by SJR
ISSN0741-3106
DOI10.1109/LED.2018.2880240
AbstractA novel architecture of cell structure tailored to ultra-high( >2000 suns) concentrationratios is proposed. The basic solar cell consists of two p-n junctions connected in series by a highly doped tunnel diode with the metallic contacts located laterally. The tunneling connection allows using direct band-gap semiconductor compounds aiming to optimize the absorption of the spectrum. The performance of the novel architecture is investigated up to ultra-high concentration using TCAD software. Simulations show its viability for developing a new generation of solar cells to increase the potential in terms of efficiency and cost reduction of ultra-high concentrator systems. The solar cell does not show any degradation with concentration and efficiency as high as 28.4% at 15000 suns has been obtained for a preliminary design.
Palabras chaveVertical solar cells, concentrator photovoltaics, gallium arsenide (GaAs), tunnel diode, series resistance.

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