Custom Design of Pinned Photodiodes in Standard CMOS Technologies for Time-of-Flight Sensors

TítuloCustom Design of Pinned Photodiodes in Standard CMOS Technologies for Time-of-Flight Sensors
AutoresJ. Illade-Quinteiro, V.M. Brea, P. López, D. Cabello, G. Doménech-Asensi
TipoComunicación para congreso
Fonte 14th International Workshop on Cellular Nanoscale Networks and their Applications, Notre Dame, Estados Unidos, 2014.
DOI10.1109/CNNA.2014.6888603
AbstractIn this paper two different structures for custom design of pinned photodiodes in standard CMOS technologies are presented and analyzed in terms of dark current.
Palabras chavecustom pinned photodiodes standard CMOS technology dark current