Impact of cross-section of 10.4 nm gate length In0.53Ga0.47As FinFETs on metal grain variability

TítuloImpact of cross-section of 10.4 nm gate length In0.53Ga0.47As FinFETs on metal grain variability
AutoresN. Seoane, G. Indalecio, A.J. Garcia-Loureiro and K. Kalna
TipoPoster para congreso
Fonte Simulation of Semiconductor Processes and Devices 2016, Nuremberg (Alemania), pp. 241-244 , 2016.
ISBN978-1-5090-0817-9
ISSN1946-1569