Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET

TítuloRandom Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET
AutoresN. Seoane, G. Indalecio, E. Comesana, M. Aldegunde, A. J. Garcia-Loureiro and K. Kalna
TipoArtículo de revista
Fonte IEEE Transactions on Electron Devices, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, Vol. 61, pp. 466-472 , 2014.
RankRanked Q1 in Electronic, Optical and Magnetic Materials by SJR
ISSN0018-9383
DOI10.1109/TED.2013.2294213